Abstract
The self-diffusion of O18 into Pb(Zr,Ti)O3 [PZT] thin films on Pt∕TiO2 coated Si wafers from an ambient of 99% O218 gas tracer was investigated by secondary ion mass spectroscopy (SIMS) when annealed at 450°C, 550°C, and 650°C for up to 30min. The results show that the O18 profile in PZT changed significantly with anneal temperature and the highest concentration of exchanged oxygen was at the PZT/Pt interface when annealed at 650°C. Modeling of the oxygen tracer diffusion profiles from the 450°C and 550°C data yielded an activation energy of 0.83eV when assuming 1D diffusion. Simulation of the 650°C SIMS data indicated that the oxygen was dissociating on the catalytic Pt film underneath the PZT and then back diffusing into the PZT causing a higher concentration of oxygen at the PZT/Pt interface than at the surface.
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