Abstract
ABSTRACT The Pb(Zr, Ti)O3 and PbTiO3 precursor films formed on Pt/TiOx/SiO2/Si substrate below 400°C by metal-organic chemical-vapor-deposition (MOCVD) method were treated hydrothermally in Ba(OH)2-Pb(OH)2 mixture alkaline solution at 240°C and successfully transformed into (Pb, Ba)(Zr,Ti)O3 and (Pb, Ba)TiO3 ferroelectric thin film. This low temperature preparation method is compatible with the ULSI process becouase thermal damage to the circuit is avoidable. XRD χ − 2θ reciprocal space mapping measurements, shows that orientation of the thin film treated hydrothermally is influenced much by crystallite states of MOCVD precursor film. When the PbTiO3 precursor film is pre-crystallized having small (001) peak in XRD, the (Pb, Ba)TiO3 thin film has clear (001) orientation after hydrothermal treatment. The (Pb, Ba)TiO3 thin film treated at 240°C for 3 h in 0.2 M Ba(OH)2 − 0.1 M Pb(OH)2 solution has a hysteresis loop with good shape, and the polarization at zero electric field of the treated thin film is 8 μC/cm2.
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