Abstract
In this paper, the oxygen sensitivity of gallium oxide thin films and single crystals at high temperatures is presented. To investigate the oxygen sensing mechanism at high temperature, we used sputtered β-Ga2O3 thin films and β-Ga2O3 single crystals with different electrode geometries. For β-Ga2O3 single crystals: a response time of about 10 s was achieved, while for β-Ga2O3 thin-film this was about 11 s. For single crystal samples the response time does not depend on the type of electrode. This can be explained by the combination of a greater influence of surface effects and smaller influence of bulk effects.
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