Abstract
Solar-blind UV detectors based on gallium oxide thin films have attracted extensive attention for potential civil and military applications. Substrate selection plays an important role for hetero-epitaxial growth of gallium oxide thin films. Herein, β-Ga2O3 thin films were deposited on r-plane and c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The microstructure of the β-Ga2O3 thin films were analyzed by X-ray diffraction and transmission electron microscope. (2¯01)-oriented β-Ga2O3 thin films were grown on c-plane sapphire. While, β-Ga2O3 thin films with both (100) and (001) oriented grains were prepared on r-plane sapphire. Moreover, photodetectors were fabricated. Detectivity of the photodetectors made from β-Ga2O3 thin films on r-plane and c-plane sapphire is about 1.3 × 1014 Jones and 7.2 × 1013 Jones, respectively. The β-Ga2O3 thin films grown on r-plane sapphire is benefit for solar-blind UV detectors fabrication.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
