Abstract
Six ZnO thin films were grown under different oxygen flow rates by electrochemical deposition onto commercial indium tin oxide substrates. X-ray diffraction (XRD), optical absorption, and photoluminescence (PL) measurements were performed on all films. XRD measurements showed that films are highly (0002) c-axis oriented. It has been observed that the growth rates of the films are highly dependent on the oxygen flow rates. High growth rate is obtained for the midoxygen flow rates in the cell. Calculated crystallite size values have an increasing trend as the oxygen flow rate increases. Absorption measurements have revealed that the band gap energy of ZnO thin films is about 3.4eV. PL measurements showed that two emissions are observed in all films: free exciton emission at about 3.37eV and so-called blue emission at 2.66eV in ZnO. Relatively low dose (5×1012e−∕cm2) and high-energy electron-irradiation (HEEI) (12MeV) experiments were performed on all films. Their effects on the optical and structural charac...
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
