Effect of oxygen flowrate on optical and electrical properties in Al doped ZnO thin films

Abstract

Al doped ZnO (AZO) thin films were synthesised on quartz glass substrates by pulsed laser deposition (PLD) method at different oxygen flowrates. The structure, composition, optical and electrical properties in the films were investigated. The result of surface profiler shows that with the increase in oxygen flowrate from 10 to 70 sccm, the films’ thickness increases from 526 to 706 nm. X-ray diffraction results show that the crystalline quality of the films is improved with the increase in oxygen flowrate; energy dispersive spectroscopy results exhibit that the Al content in the films increases from 4·32 to 6·45% with the increase in oxygen flowrate. The former leads to the weakening of grain boundary scattering; consequently, Hall mobility will increase, and the latter results in the increase in carrier concentration. As a result, the electrical resistivity in AZO films decreases from 10·92×10−3 to 2·34×10−3 Ω cm with increasing the oxygen flowrate. Moreover, the increase in carrier concentration induces the slight widening of optical band gap due to the Burstein–Moss effect with the increase in oxygen flowrate. For AZO thin films grown by the PLD method, the control of oxygen flowrate is a simple method to obtain adjustable electrical resistivity, optical band gap and ultraviolet emission.