Abstract
To investigate quantitatively the effect of oxygen on the ion yields in secondary ion mass spectrometry (SIMS) analysis of impurities in GaAs, oxygen-implanted GaAs crystals were prepared. Oxygen-induced ion yield enhancement was demonstrated by the SIMS analysis of these oxygen-implanted GaAs crystals. B, Cr, Cu, and Mn in these crystals were found to have impurity ion yields 50 times larger than those without oxygen under Ar+ bombardment. The ion yield enhancement of impurities by oxygen has been interpreted by treating ion yields as a function of oxygen fraction, i.e., probability of occupying the adjacent site to the impurities by oxygen atoms. For oxygen fractions, the local thermodynamic equilibrium calculations were carried out to obtain T parameters which enable the impurity ion yields to be estimated only by ionization potentials if the oxygen fraction is given.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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