Abstract
The enhancement of positive secondary ion yieds of silicon due to the presence of oxygen has been investigated quantitatively by low-energy (5 keV) oxygen implantation. Implantation and sputter profiling with 9 keV In + were performed in the same ion microprobe instrument. Depth profiles of substrate and implanted oxygen atoms were measured for fluences ranging from 5×10 15 to 4×10 16 O-atoms/cm 2. The oxygen concentration, c(O), in the sample was deduced from the implanted fluence and the range distribution in the Gaussian approximation. It was found that the oxygen-enhanced Si + intensity is proportional to c(O) (with x=1.4) in the concentration regime, 1.5⩽ c(O)⩽30%. The O + intensity shows a similar dependence for c(O)≳20 at.%.
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