Abstract
The implantation temperature dependence of the oxygen depth profile, microstructure, radiation damage and SiO bonding was examined in Si implanted with low-energy (25 keV) oxygen. The oxygen depth profile varied with implantation temperature: Gaussian-like shape at 280°C, triangular shape at 590°C, and again a Gaussian-like shape at 740°C. SiO bonding became tighter, and Si crystal structure was maintained more easily with increasing implantation temperature. Crystal damage near the surface became small for implantation at 740°C. These results suggest that marked oxygen migration and redistribution during ion implantation, which are determined by the oxygen diffusivity and the radiation-damage depth-profile, are the essential phenomena controlling the low-energy SIMOX process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
