Abstract
A Coulomb scattering model which includes the effect of the space correlation of oxide charges on the effective mobility of electrons in an NMOS transistor channel has been proposed. A general three-dimensional oxide charge distribution has been considered in this paper. Using this new model in a one-electron Monte Carte procedure provides the chance of theoretically studying some effects on the electron effective mobility in silicon inversion layers (such as bulk impurity charge, oxide charge distribution profile and charged-centre sign) that cannot be studied with our previous model (1994 J. Appl. Phys. 75 924). These effects have been found to noticeably influence electron effective mobility, which is in agreement with previous experimental results.
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