Abstract
The room temperature oxidation of vapor-deposited titanium films was investigated as a function of film thickness by resistivity and ellipsometric measurements. The thickness of the films ranged from 3.0 to 120 nm. The electron mean free path in the films varied from 11.3 to 26.0 nm, and the product of the bulk resistivity and the electron mean free path was 1.5 × 10 -10Ω cm 2. The values of the surface electron scattering parameter in the films were between 0.2 and 0.6 and decreased to 0.18 at the onset of oxidation. The best value for the complex refractive index of titanium was found to be 3.61-i4.06. The refractive index of the oxide film was 2.75. After a 1 d exposure of the films to room air at atmospheric pressure both the resistance and ellipsometric measurements indicated a residual oxide thickness of 2.6±0.3 nm, regardless of the original metal film thickness. These results disagree with the theoretical and experimental results of Mindel and Pollack, which implied a rapid decrease in oxide thickness with decreasing titanium film thickness.
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