Abstract
Experiments on internal photoemission of electrons at interfaces of SiyGe1−x−ySnx binary and ternary alloys (0≤x≤0.11; 0≤y≤0.19) with amorphous insulating Al2O3 reveal that the application of an additional oxidation step (5min in dry O3 at 300°C) after atomic layer deposition of first ≈1nm of alumina results in a significant increase of the electron barrier height (by ≈0.4–0.5eV) as compared to the conventionally grown Al2O3 layers. Furthermore, this supplemental oxidation step facilitates the removal of Ge sub-oxides from the interface. The observed electron barrier enhancement is suggested to be caused by formation of a wide gap germanate interlayer between the Ge-based semiconductors and alumina.
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