Abstract
The integration of a NIL into production for advanced memory devices will require compatibility with existing high-end optical lithography processes in order to meet the aggressive overlay performance specifications. To deliver such a demanding overlay specification, it is necessary for NIL to achieve reliable alignment and to expand its overlay error budget to include as many as higher-order error components along with their countermeasure options. In this paper, NIL overlay models have been developed to address alignment of full fields and partial fields.
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