Outstanding enhanced breakdown field strength and energy storage properties in Na0.5Bi0.5TiO3-based thin film by the aging process

Abstract

Aging behavior is usually perceived as a negative effect in application of ferroelectrics; however, we observe that the aging process has a unique role in improving the energy storage properties. Here, Na 0.5 Bi 0.47 La 0.03 TiO 3 (NBLT) and Na 0.5 Bi 0.5 Ti 0.97 Mn 0.03 O 3 (NBMT) thin films deposited on Pt/TiO 2 /SiO 2 /Si substrate are prepared by sol-gel method. There is a high growth rate of breakdown filed strengthen ( BDS ) and energy storage density ( W ) in aged NBMT thin film, its BDS and W are enhanced from 2175 kV cm −1 to 3492 kV cm −1 , and from 16.1 J cm −3 to 37.7 Jcm −3 , respectively. It is demonstrated that the aging process tends to exhibit various levels of sensitivity on doping sites due to the formation and orientation of the defect dipoles are different. Besides, (Na 0.5 Bi 0.5 Ti 0.97 Mn 0.03 O 3 /Na 0.5 Bi 0.47 La 0.03 TiO 3 ) 5 and 0.65 Pb (Mg 1/3 Nb 2/3 ) O 3 -0.35PbTiO 3 /(Na 0.5 Bi 0.5 Ti 0.97 Mn 0.03 O 3 /Na 0.5 Bi 0.47 La 0.03 TiO 3 ) 3 [(M/L) 5 and P/(M/L) 3 ] are constructed to introduce interface to enhance BDS , where an outstanding energy density of 56.8 J cm −3 under 3579 kV cm −1 is achieved in aged P/(M/L) 3 thin film. The aging process and introduction of interfaces are responsible for this improvement, and a possible mechanism for the aging process is proposed. It is concluded that the aging process combined with interface engineering is an effective strategy to improve energy storage properties. • NBT-based thin film with different doping sites were fabricated by sol-gel method. • The aging behavior and interface engineering enhance breakdown field strength. • Realizing energy density of 56.8 J cm −3 under 3579 kV cm −1 in aged P/(M/L) 3 thin film. • A possible mechanism for the aging process was proposed.