Abstract
The photo resist stripping process in photo lithography plays an important role in manufacturing large-scale integration. In the present study, experimental information is obtained to establish highly concentrated ultra pure ozonized water technology for stripping the photo resist, in stead of sulfuric acid, hydrochloric acid etc. In the experiment, rotating flows of the ozonized water on the photo resist on silicon wafer is established with the irradiation by excimer light. Ozonized water on the rotating wafer forms Radial Liquid-film flow. After the process, the thickness of unremoved photo resist on the wafer is measured by ellipsometer. And wettability on the photo resist is also measured. As the result, it is clarified that the irradiation of excimer light and the rotating rate of silicon wafer contribute high efficiency of photo resist removal rate compared to merely ozonized water.
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