Abstract
We analyzed Incremental Step Pulse Programming (ISPP) slope degradation to improve the program efficiency of 3D NAND Flash memory using both measurement and simulation data. The simulation data are calibrated with the measurement data and they are in good agreement. The ISPP slope indicates program efficiency and its ideal value is 1. In reality, however, ISPP slope degradation (<1) occurs in the charge trap flash (CTF) memory and makes program speed slow. Two parameters affecting the ISPP slope degradation are quantitatively investigated: electron trap density (NT) and trap energy level (ET) of the charge trap nitride (CTN). There are optimal NT and ET fitted with 3D NAND Flash cell providing better program efficiency with lower retention loss. Detailed reasons are physically explained by observing the electron behaviors in various NT and ET values.
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