Abstract
Self-assembled Ga1−xMnxAs magnetic semiconductor quantum dots have been grown on Si (001) substrates using droplet epitaxy by molecular-beam epitaxy. Structural characterization reveals that these dots possess a zinc-blende lattice. The Ga1−xMnxAs quantum dots with 8% Mn content are ferromagnetically soft and slightly anisotropic at low temperature, and show the superparamagnetic behavior with a blocking temperature of 20 K in the in-plane direction. Moreover, the results of x-ray absorption near edge structure provide direct evidences for the substitutional Mn2+ ion with a half-filled d5 configuration for the Ga site, suggesting the hole-mediated ferromagnetism in zero-dimensional Ga1−xMnxAs quantum dots.
Published Version
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