Abstract
This work demonstrates that by controlling the rapid thermal annealing temperature, amorphous chromium-doped indium zinc oxide films develop an amorphous-crystalline bi-layer structure and show magnetization up to ∼30 emu/cm3. The crystalline layer arises from significant out-diffusion of Zn from surfaces, leading to a large difference in the Zn:In ratio in amorphous and crystalline layers. Doped Cr ions in amorphous and crystalline layers form different valence configurations, creating a charge reservoir which transfers electrons through amorphous-crystalline interfaces and in turn enhances ferromagnetism.
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