Understanding the temperature-dependent evolution of solution processed metal oxide transistor characteristics based on molecular precursor derived amorphous indium zinc oxide

Shawn Sanctis, Jörg J Schneider + Show 3 more

https://doi.org/10.1039/c6tc03915d

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Journal: Journal of Materials Chemistry C	Publication Date: Jan 1, 2016
Citations: 12

Abstract

Photoelectron emission spectroscopy and positron annihilation spectroscopy allow a comprehensive interpretation of the performance of IZO-based TFTs.

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