High-Mobility Solution-Processed Amorphous Indium Zinc $\hbox{Oxide/In}_{2}\hbox{O}_{3}$ Nanocrystal Hybrid Thin-Film Transistor

Abstract

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In2O3 NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm2·V-1·s-1 and an on-off ratio of 107 , which were obtained at 1 mol% In2O3 NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.