Oriented Bicrystalline GaN Nanowire Arrays suitable for Field Emission Applications

Abstract

Oriented bicrystalline GaN nanowire arrays are synthesized by a catalytic carbon thermal reduction process. The bicrystalline structure is composed of (001) planes and the twin angle is 124°. Field‐emission measurements show that the oriented bicrystalline GaN nanowire arrays produce a current density of 10 μA/cm2 at a lower turn‐on fields of 8 V/μm. It suggests that the oriented bicrystalline GaN nanowire capped with catalyst particle arrays can serve as a promising candidate for field emission emitters.