Abstract
Aluminium layers were grown on GaAs(001) surfaces by chemical beam epitaxy (CBE). The growth was monitored in real time using dynamic optical reflectivity. A new orientation relationship between Al and GaAs has been found in addition to the three orientation relationships which are seen in molecular beam epitaxy (MBE) grown Al/GaAs samples. All Al layers were discontinuous; the small islands have four orientations in roughly equal proportions, whilst most of the large islands have the single orientation Al(011) a. This occured for all surface reconstructions present on the GaAs surface. A model is proposed for the evolution of morphology and orientation of these islands.
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