Abstract
A process has been developed by which after metal organic molecular beam epitaxy (MOMBE) a freshly grown GaAs(100) surface is passivated by an arsenic overlayer. This As capping allows the transfer of a MOMBE sample through atmosphere into another UHV system where after desorption of the passivating layer a clean GaAs surface is prepared for surface studies. Detailed investigations show that the passivating film is homogeneous and consists of amorphous arsenic. After desorption of the As film at 610 K. the MOMBE grown GaAs surface exhibits a (1 × 1) LEED patterns, which changes into a c(6 × 4) pattern after annealing to 770 K, thus indicating an As deficient GaAs(100) surface.
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