Abstract
The surface chemistry in metalorganic molecular beam epitaxy (MOMBE) growth was studied by observing desorbed species with a mass spectrometer when differently prepared GaAs(100) surfaces were exposed to continuous and pulsed trimethylgallium (TMG) beams. It has been found that TMG decomposition is suppressed on oxidized GaAs surfaces (providing selective-area growth) and also on a GaAs surface having a stable structure (providing stoichiometry dependence of the growth rate). In this paper, we discuss the mechanism of these decomposition suppressions of TMG within the framework of precursor-mediated chemisorption. The suppression of decomposition on a mask surface is interpreted by considering the absence of the deep precursor states, while decomposition suppression on a GaAs surface with a stable structure was found to be due to a high barrier of the precursor states to chemisorption.
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