Abstract
We attempted the epitaxial growth of CeO2 on A-plane Al2O3(112¯0) (A-Al2O3) substrates. As a buffer layers, CeO2 layers (CeO2-I) were firstly prepared on A-Al2O3 substrates at room temperature, and crystallized by ex situ annealing. The second CeO2 layers (CeO2-II) were deposited on CeO2-I. The thickness of CeO2-I dependence of the characteristics of CeO2-II and EuBa2Cu3O7−σ (EBCO) thin films, which were deposited on CeO2-II, was investigated. The CeO2-II layer completely was oriented along the c axis, while the in-plane orientation was not perfect. The critical current density (Jc) decreased with degrading the in-plane orientation of EBCO thin films. It is found that the in-plane orientation of EBCO thin films greatly effected on Jc. The best Jc value at 77.3K of EBCO thin films was 1.9MA/cm2.
Published Version
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