Electron beam induced orientation selective epitaxial growth of CeO2(100) layers on Si(100) substrates by dc reactive sputtering

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From studies on the epitaxial growth of CeO2 layers on Si(100) substrates using reactive dc magnetron sputtering, it has been found that the epitaxial CeO2 layer with (100) or (110) orientation is selectively grown by controlling substrate bias and the growth rate. In order to develop this technology into two dimensional orientation selectivity, we attempt to grow CeO2(100) by low energy electron irradiation, as an alternative way to substrate bias application. It proved that electron beams in two energy regions of 30 ~ 40 and 80 ~ 100 eV are effective on preferential growth of CeO2(100) layers. Interfacial structures of CeO2(100)/Si(100) are studied using cross-sectional transmission electron microscopy.