Abstract
The magneto-optical properties of a biased semiconductor inversion layer (GaAlAs–GaAs) are calculated for applied magnetic fields in the Faraday and Voigt configurations. Electric and magnetic dipole transitions for spin flip in an n-type inversion layer are investigated. Resulting line shapes and the orientation dependence of the effective Landé factor g*are discussed. The electric potential in the inversion layer is calculated self-consistently.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
