On the g factor for electrons in n-type silicon surface inversion layers

Abstract

Self-consistent calculations for energy levels are performed for n-type inversion layers of silicon with magnetic field perpendicular to the (100) surface. ‘Apparent’ g factor g ∗, obtained from the period of oscillation of states density at Fermi level for varying magnetic field, is plotted as a function of the Γ 2βH , where Γ is the width of Landau levels. The results show that g ∗ ∼ g for Γ ⪢ 2βH, and g ∗ ∼ 5 for Γ < 2βH . This means that we should be very careful when interpret the g shift of electrons in inversion layers for small surface electron density.