Abstract
The high speed melt growth behaviour of elemental Si crystals in (001), (011), (112) and (111) orientations is assessed in some detail. Rapid growth conditions are established by transient melting of Si samples using nanosecond laser radiation pulses. Very fast cooling after irradiation leads to the formation of highly undercooled melts and yields crystal growth rates of up to and beyond 10 m/s. Under the most extreme conditions the melt undercooling becomes so large that crystal growth breaks down and an amorphous final solid phase is produced. The dependence of the maximum crystal growth velocity upon the crystallographic orientation of the growth surface is determined. Discrete high velocity regimes of defective crystal growth are identified. Defect formation and propagation processes are characterized on the atomic scale woth the aid ofhigh resolution electron microscope images of growth breakdown interfaces.
Published Version
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