Organopalladium catalyst on S-terminated GaAs(001)-(2×6) surface

Abstract

Organopalladium molecules, such as Pd(CH3COO)2 ({Pd}), immobilized on the S-terminated GaAs(001), termed GaAs–S–{Pd} have high catalytic activity and cycle durability in the Mizoroki–Heck reaction. It is thought that the presence of Ga–S bonds in the single atomic layer S-termination is essential for these catalytic properties despite the much higher thickness (∼100nm) of the {Pd} films. In this study, the authors demonstrate the retention of Ga–S bonds in ultrathin GaAs–S–{Pd} by using reflection high-energy electron diffraction and scanning tunneling microscopy (STM). The ultrathin GaAs–S–{Pd} was prepared by using a vapor-deposition technique. Deposited {Pd} was observed as ∼1nm dotlike structures with STM. The adsorption rate of {Pd} was also investigated.