Abstract
We present atomic-resolution images, obtained with scanning tunneling microscopy (STM), of smooth, in situ prepared, sulfur-terminated (S-terminated) GaAs(001) surface reconstruction. It is found that 2×6 surface reconstruction is dominant on the S-terminated GaAs(001) surface. This 2×6 surface reconstruction, of which the cell contains five S-S adatom dimers, is determined by both STM and reflection high-energy electron diffraction. Atomic models, which are consistent with both STM images and electron-counting heuristics, are also shown.
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