Organometallic vapor phase epitaxy of Er, O-codoped GaAs using tris(dipivaloylmethanato)erbium

Abstract

Er,O-codoped GaAs (GaAs:Er,O) was grown by organometallic vapor phase epitaxy (OMVPE) using tris(dipivaloylmethanato)erbium [(C11H19O2)3Er: Er(DPM)3] at different growth temperatures (Tg). In photoluminescence (PL) measurements, Er-related PL lines partly assigned as an Er-2O center were observed in the samples grown at Tg = 500 – 550° C. The result revealed that the self formation of Er-2O center was accomplished by an incorporation of oxygen atoms in the Er(DPM)3 source. In the dependence of a H2 flow rate through the Er source on the PL properties, the intensity of the Er-related PL increased as that of the band-edge PL of GaAs host decreased. The correlation of PLs shows a highly efficient energy-transfer from GaAs host to the 4f-shell of Er ions in the GaAs:Er,O samples.