Luminescence properties of Dy-doped GaAs grown by organometallic vapor phase epitaxy

Abstract

Photoluminescence (PL) properties of GaAs doped with Dy by organometallic vapor phase epitaxy (OMVPE) have been investigated. In measurements at 4.2 K, characteristic luminescence has been successfully observed at around 1.1, 1.3, 1.7 and 2.8 μm, which is assigned to the intra-4f shell transition of Dy 3+ ions. The Dy-related PL intensity depends strongly on growth temperature, though the spectrum is almost invariant. The intensity decreases with increasing growth temperature, while the Dy concentration remains almost constant against the growth temperature. This indicates that the formation of optically active atom configurations around Dy ions is suppressed at higher growth temperatures. Furthermore, new Dy-related emission lines appear in the Dy-doped GaAs with Er.