Organometallic vapor phase epitaxial growth of GaAs-based pseudomorphic modulation-doped field-effect transistor structures

Abstract

We report the preparation of InGaAs/AlGaAs strained-layer(pseudomorphic) modulation-doped field-effect transistor (MODFET) structures by organometallic vapor phase epitaxy (OMVPE). Devices fabricated from these structures with 0.9 μm gate lengths had dc extrinsic transconductances up to 340 mS/mm. Microwave testing up to 40 GHz showed current gain cutoff frequencies ( fT ) of 22 GHz and estimated maximum frequency of oscillation ( fmax ) of 70 GHz. This is the first report to our knowledge of the use of OMVPE material in the fabrication of pseudomorphic MODFETs.