Abstract
In this paper, we investigated the deposition of pentacene thin film on a large area substrate by Organic Vapor Phase Deposition(OVPD) and applied it to fabrication of Organic Thin Film Transistor(OTFT). We extracted the optimum deposition conditions such as evaporation temperature of , carrier gas flow rate of 10 sccm and chamber vacuum pressure of 0.1 torr. We fabricated 72 OTFTs on the 4 inch size Si Wafer, Which produced the average mobility of , average subthreshold slope of 1.04 dec/V, average threshold voltage of -6.55 V, and off-state current is . The overall performance of pentacene TFTs over 4 ` wafer exhibited the uniformity with the variation less than 20 %. This proves that OVPD is a suitable methode for the deposition of organic thin film over a large area substrate.
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