Abstract
The work function of tungsten-doped indium oxide (IWO) thin films could be enhanced to 5.5 eV by forming platinum and tungsten codoped indium oxide (In 2 O 3 :Pt,W) thin layers on them. With the IWO/In 2 O 3 :Pt,W double-layer as the anode, an OLED device with the structure of IWO/In 2 O 3 :Pt,W/NPB/Alq 3 /LiF/Al was fabricated. When the voltage is 14 V, the current density and the brightness of the device reach 1600 mA/cm 2 and 2.5times10 4 cd/m 2 , respectively.
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