Abstract
We have demonstrated device operation of down-scaled n-type field effect transistors (FETs) with ink-jet printed source/drain contacts and sub-μm channel length, using the P(NDI2OD-T2) semiconducting polymer as active material. We integrated these devices with down-scaled p-type FETs made with bis(triisopropylsilylethynyl)pentacene to fabricate complementary inverter gates, in which both transistors and the printed interconnections were implemented on the same substrate. The devices operate at 10 V supply voltage, achieve noise margin values of 56% of VDD2 and a gain higher than 10. They are therefore suitable for printed, high performance organic integrated circuits with low supply voltage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.