Abstract
This paper presents organic based logic and memory circuits. All those circuits are made with organic N- and P-type transistors. Organic complementary NAND and NOR gates were characterized and show performance equivalent to or better than the literature-reported ones. The presented memory circuits include an SRAM memory point and an edge-triggered flip-flop. The flip-flop is made of six organic two-input and three-input NAND gates, representing a total of 26 organic transistors for a surface of 170 mm2. The maximum operating frequency of this flip-flop is 220 Hz under a supply of ±20 V. All the circuits were manufactured using a standard organic sheet-to-sheet process in ambient air. Electrical characteristics remain identical after repeated measurements. Finally, a model matching the presented circuits' behavior was carried out, permitting the design of more complex circuits.
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