Abstract

This paper is devoted to the optoelectronic properties of hydrogenated amorphousgermanium (a-Ge:H) deposited by the plasma-enhanced chemical vapour deposition(PECVD) technique on the powered electrode under different applied radio frequencypower (rf-power) in a conventional, parallel plate reactor. This study investigates in moredetail the density of states of the material by analysing the optical absorptionspectra obtained by combining optical measurements, photothermal deflectionspectroscopy (PDS) and constant photocurrent method (CPM) techniques. The PDS andCPM results are in good agreement. The disorder parameter in optimized samples(E0 V∼42 meV) seems to be the lowest reported to date. However, the deep-gap states densityND is higher in optimized a-Ge:H than in optimized hydrogenated amorphous silicon (a-Si:H)by more than an order of magnitude.

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