Abstract
In this study, Bi doped ZnO (Bi:ZnO) nanocomposites mixed with different weight-percentages (0.1, 0.3, 0.5% Bi) content were coated on the p-Si wafer via spin-coating method. Some main electrical and optical parameters of the Schottky structure with Bi doped ZnO interlayer have been evaluated in dark and under different illumination intensities (20, 40, 60, 80, 100 mW/cm2). Optical and electrical features of the Al/(Bi:ZnO)/p-Si (MIS) type PD were investigated and compared via current-voltage/time (I–V/t) and capacitance/conductance-voltage (C/G/w-V) measurements at 1 MHz. Main electrical parameters of them such as ideality factor (n), zero bias barrier height (ΦBo), and series resistance (Rs) were calculated on dark and 100 mV/cm2 illumination intensity. As a result of Ohm's law used in the determination of Rs, contribution rate increases while Rs values decrease. In addition, the electrical admittance measurements were made at 1 MHz. The C−2-V properties and the photovoltaic property of the diode was analysed according to the results obtained.
Published Version
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