Abstract
By irradiating a Nd:YAG (λ=266 and 532 nm, pulse) laser beam, we investigated the cleaning process of a photoresist particles on Si and ITO substrate. The influences of laser fluence, wavelength, and substrate properties on the laser cleaning performance were investigated. The removal rate for the particles of Si substrate was higher than that of ITO at the same laser fluence and pulses for a wavelength of 266 nm. Using 2nd harmonic Nd:YAG laser (λ = 532 nm), it was found to be inappropriate for the complete particle removal and ablation of photoresist film without substrate damage. Water-condensed particles are rarely cleaned even on the laser fluence of being capable of completely removing dried sample resulting from the increase of viscosity of the particles, the scattering, and the reflection of incident laser beam.
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