Abstract
A photoresist films on Si and commercial glass and the paste dried and hardened for forming barrier rib of PDP were directly etched with Ar<SUP>+</SUP> laser Nd:YAG laser beam. Exposing the photoresist to a fourth harmonic Nd:YAG laser beam to produce electrodes on the transparent conductive material, the etching threshold laser fluence was 25 J/cm<SUP>2</SUP> and the damage of substrate was appeared over the laser fluence of 40 J/cm<SUP>2</SUP>. The reaction mechanism of the photoresist by the UV laser beam, compared to that by Ar<SUP>+</SUP> laser, is photon-assisted ablation. A barrier rib is compared of mixtures that were made form organic gel, glass powder and ceramic powder. Using a second harmonic Nd:YAG laser the threshold laser fluence was 65 mJ/cm<SUP>2</SUP> for the barrier rib samples softened at 120 degrees C. The thickness of 130 (mu) M of the samples on the glass was clearly removed without any damage on the glass substrate by laser fluence of 19.5 J/cm<SUP>2</SUP>. The barrier rib samples on hot plate were etched by Nd:YAG laser with increasing a temperature of the sample. The etch rate at 200 degrees C was 4 times of that at room temperature. Indium tin oxide thin films on lime glass were directly etched using the second and fourth harmonic Nd:YAG laser beam.
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