Abstract
The cleaning of photoresist residues on Si and ITO substrate is necessary in electronics device fabrication in order to improve the device performance and manufacturing efficiency. This study is about the laser cleaning of the photoresist residues (AZRFP23OK2) on the substrates being able to substitute conventional photoresist ashing and wet cleaning equipment. The laser cleaning effect of Q-switched Nd:YAG laser at 266 and 532 nm in order to remove the residues on Si and ITO substrate was investigated with regard to laser fluence, shots and wavelength. The cleaning efficiency for the residues on Si substrate was higher than that of ITO at the same laser fluence and shots for both 266 and 532 nm. Much more effective cleaning of the residues on the substrate can be done with flowing assistant inert N<sub>2</sub> gas during the laser cleaning process.
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