Optimum implantation conditions for ion beam synthesis of buried cobalt silicide layers in Si(100)

Abstract

Ion beam synthesis of buried CoSi2 layers in Si(100) (Co+ energy=170 keV, dose=1.7×1017 ions cm−2) is studied as a function of implantation temperature (250→500 °C) and beam current density (1.6→3 μA cm−2). Conventional cross-section transmission electron microscopy and Rutherford backscattering spectrometry are used to correlate the experimental conditions with the amount of pinholes in the silicide layer and the flatness of the CoSi2/Si interfaces after annealing. Optimum implantation conditions yielding a pinhole-free buried silicide layer with flat interfaces are obtained.