Abstract
Ion beam synthesis of buried CoSi2 layers in Si(100) (Co+ energy=170 keV, dose=1.7×1017 ions cm−2) is studied as a function of implantation temperature (250→500 °C) and beam current density (1.6→3 μA cm−2). Conventional cross-section transmission electron microscopy and Rutherford backscattering spectrometry are used to correlate the experimental conditions with the amount of pinholes in the silicide layer and the flatness of the CoSi2/Si interfaces after annealing. Optimum implantation conditions yielding a pinhole-free buried silicide layer with flat interfaces are obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
