Abstract
In this reported work, both high peak current density and high peak-to-valley current ratio (PVCR) in AlAs/GaAs triple-barrier quantum-well intraband resonant tunnelling diodes (TBQW IRTDs) were accomplished. The valley current density (JV) of TBQW IRTDs can be degraded as the barrier thickness reaches 4 nm thickness. This result suggests narrow barrier thickness is due to the slight band bending effect in the conduction band of i -AlAs barrier layers. The peak current density (JP) of the TBQW IRTDs will be <2.43 KA/cm2 as the i -AlAs barriers thickness of the TBQW IRTD reaches 5 nm thickness. The optimal thickness of barrier layers should be selected at 4 nm thickness to obtain the highest PVCR value (about 4270), in which the sample with barrier layers of 4 nm thickness possesses the lowest valley current density.
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