Abstract
A study of the performance of single-junction InGaP∕GaAs and dual-junction InGaP∕GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (JP) and valley current (JV) densities should be greater than the short-circuit current density (Jsc) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (JP) and valley current density (JV) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP∕GaAs tandem solar cell can be enhanced even under low concentration ratios.
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