Abstract
The fabrication of double-barrier resonant tunneling diodes (DBRTDs) using γ-Al2O3/epitaxial-Si heterostructures with different well thicknesses and different barrier thicknesses was studied. Current–voltage characteristics of the DBRTDs were investigated to determine the relationships between the peak-to-valley current ratio and the quantum well thickness, and between the peak current density and the barrier thickness for the maximum peak-to-valley current ratio (PVCR) at room temperature. In this study, we confirmed a maximum peak-to-valley current ratio of 26 at room temperature with a quantum well (epi-Si) thickness of 3 nm and a barrier (γ-Al2O3) thickness of 2 nm. A comparison between the theoretical and experimental peak voltage positions for a negative differential resistance was performed, indicating good agreement. A lower peak current density of few mA/cm2 was obtained.
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