Abstract

We report the impact of small barrier thickness asymmetry on the dc I–V characteristics of AlAs/GaAs double barrier resonant tunneling diodes. With a bottom AlAs barrier 6 ML thick and GaAs well 18 ML thick, the effects of varying the top AlAs barrier thickness from 5 to 8 ML produced significant changes in peak current density, peak voltage, and peak-to-valley current ratio (PVCR). PVCRs of 5.6 were obtained on a 7/18/6 monolayer structure, the highest reported to date for an AlAs/GaAs DBRTD structure.

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