Abstract

Power switches are critical components in power conversion for a wide variety of applications, including DC-AC inverters for electric vehicles (EVs), solid state breakers, and energy storage devices. Improving the efficiency and performance of semiconductor power switch components can have wide benefits, improving the efficiency and accelerating deployment of these applications. Compared to conventional power switches, such as insulated-gate bipolar transistors (IGBTs), the B-TRAN™ bidirectional power switch from Ideal Power offers significant improvements in efficiency, reducing power losses by 50% or more depending on the application. With its higher efficiency, B-TRAN results in less heat being generated and thus has significantly lower thermal management requirements. In addition, a single B-TRAN™ replaces multiple conventional power switches for bidirectional applications. Beginning in mid-2020, Ideal Power teamed with QP Technologies, a leading provider of microelectronic packaging and assembly services, to package their B-TRAN switches in various TO packages (a wide range of small-pin-count packages often used for discrete parts such as transistors or diodes). The development work started with TO-247, then moved TO-264 packages, and finally transitioned to a custom direct-bond copper (DBC) solution. To achieve a high-reliability design, QP Technologies and Ideal Power focused on developing die and packaging designs based on flip-chip technology in lieu of wirebonding to maximize the life cycle of the product. This paper investigates the challenges, solutions and finally the fabrication of the first double-sided B-TRAN device.

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