Abstract
Suitable HBT and bump configuration for the BHS (Bump Heat Sink) structure are experimentally investigated. The best results in terms of thermal and electrical characteristics is obtained from the combination of a single emitter finger and an “H” shaped bump. Power HBTs are demonstrated with typical power added efficiencies η add of 70% at 8.0 W and a linear power vs transistor size relation up to 10 W at 0.9 GHz CW with V cc = 6 V, using the optimized structure. A three-stage HBT MMIC power amplifier and a power amplifier module for GSM class 4 are demonstrated with η add of 53% at 5.0 W, for V cc = 6 V CW operation, also using the optimized structure.
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